Although the development of Moore's Law, which is regarded as the standard in the global semiconductor industry, faces bottlenecks and challenges, semiconductor companies are still actively developing new materials and stepping up their pace in process miniaturization. The National Nanotechnology Laboratory of the National Research Institute has stated that the triangular germanium fin transistor technology can overcome the germanium channel defect problem on silicon substrates and enable semiconductor technology to enter the 10 nanometer process.

The evolution speed of semiconductor industry processes is getting faster and faster. Intel's 22 nanometer process is about to enter mass production, TSMC's process technology is also entering 28 nanometer, DRAM technology will enter 30 nanometer by the end of the year, and will enter the 20 nanometer generation in 2012. NAND Flash industry processes were 26 and 27 nanometer processes in 2011, and will enter 20 and 19 nanometer processes in 2012. Semiconductor industry players expect to enter the 14 nanometer process generation in the next 2 to 3 years.

Semiconductor companies have stated that as process technology continues to shrink, especially as semiconductor process technology enters below 10 nanometer processes, new machines and materials will be the two major challenges faced by semiconductor companies. Taking new machine equipment as an example, EUV (Ultra Ultraviolet Photolithography) is expensive, which is quite a headache for semiconductor companies. On average, one EUV machine equipment costs 100 million US dollars, equivalent to about 3 billion New Taiwan dollars, which is a very high investment for wafer fabs.

TSMC's Senior Vice President of Research and Development, Jiang Shangyi, has stated that TSMC has not yet decided which type of equipment to use for its 14 nanometer process. The efficiency of EUV machines has resulted in lower than expected wafer output. In the future, whether it is EUV technology or multi electronics, semiconductor process technology will be used? The technology of light beam shadowless lithography (MEB) is a major issue for semiconductor devices and requires further efforts.

In terms of semiconductor materials, the National Nanodevices Laboratory of the Research Institute stated that compared to silicon substrates, the transistor operating speed of pure germanium materials can be increased by 2-4 times, while the triangular germanium fin transistor technology can overcome the problem of defects in germanium channels on silicon substrates and achieve 10 nanometer transistor devices; Furthermore, the silver metal upright wire technology utilizes a bottom-up approach to overcome the process bottleneck of traditional tungsten metal plug structures during size reduction.

According to the analysis of the National Nanotechnology Laboratory, silver is currently the metal with the lowest resistance value and can meet the requirements of the 10 nanometer generation metal wire manufacturing process.

Furthermore, the production of green and environmentally friendly double-sided high-efficiency solar cells on silicon chips, combined with copper indium gallium selenide thin film transistor technology, can develop silicon-based solar elements for self supplied power line modules, including multiple key technologies compatible with the connecting wires of integrated circuits, including low-temperature (~400 ° C) copper indium gallium selenide thin film co evaporation technology, sodium free and cadmium free green environmental protection process technology, and high light collection rate surface roughness technology, which can be closely integrated with the semiconductor industry and technology.